Temporary Wafer Bonding Materials with Mechanical and Laser Debonding Technologies for Semiconductor Device Processing

Journal of Microelectronics and Electronic Packaging, Vol. 14, Issue 1
Apogee® Mechanical Debonder
Wafer Size: 200mm
Substrate Type: Glass, Si
This paper evaluates temporary wafer bonding materials for semiconductor processing and shows compatibility with both mechanical and laser debonding approaches. In the mechanical release flow, bonded wafer pairs were separated using a Cee® Apogee® Mechanical Debonder.
Publication Year: 2017

Process Overview

This article focuses on temporary wafer bonding materials designed for backside semiconductor processing in wafer-level packaging and 3-D IC fabrication. The study evaluates three polar thermoplastic bonding materials, labeled Material A, B, and C, along with mechanical and laser release approaches on 8-inch blank silicon wafers using either silicon or glass carrier wafers, depending on the debond method. For the mechanical release process, the paper explicitly states that bonded wafer pairs were mechanically debonded using a Cee® Apogee® Mechanical Debonder. The study reports successful debonding after wafer thinning and downstream processing, showing that the temporary bonding stack remained compatible with mechanical release while preserving the thinned device wafer. This makes the paper a strong reference for Cee® Apogee® equipment in advanced temporary wafer bonding and debonding workflows.

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