A dielectrophoretic chip packaged at wafer level

Spin Coater
Advanced Packaging
Materials: SU-8

Ciprian Iliescu et al. ResearchGate

Apogee® 200 Spin Coater

Wafer Size: Not Specified

Substrate Type: Glass, Si

This publication describes a wafer-level bonding process for a dielectrophoretic microfluidic chip. The exposed source text explicitly states that SU8-5 photoresist was spun on a dummy silicon wafer using a CEE spin coater in a two-step recipe, followed by detachment on a vacuum hot plate at 150°C before alignment and bonding.

Publication Year: 2006

Process Overview

This work presents fabrication of a dielectrophoretic chip packaged at wafer level, using an imprinted SU8 bonding process between silicon and glass wafers. The source text explicitly states that SU8-5 photoresist was spun on a dummy silicon wafer using a CEE spin coater in two steps: 500 rpm for 15 s and 3,000 rpm for 60 s, producing a 12 μm SU8-5 layer. After printing the SU8 layer to the silicon wafer, wafer detachment was performed on a vacuum hot plate at 150°C using a blade, followed by alignment with a glass wafer containing inlet/outlet holes and final wafer-to-wafer bonding. This makes it a useful legacy CEE reference tied directly to a defined photoresist coating and thermal process in microfluidic device fabrication.

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