Direct Photopatterning of Metal Oxide Structures Using Photosensitive Metallorganics

Spin Coater
Lithography
Materials: MIBK

Georgia Institute of Technology / Journal of The Electrochemical Society

Cee® 100 (Legacy)

Wafer Size: 100mm

Substrate Type: Si

This Georgia Tech paper describes direct photopatterning of mixed-metal oxide films using a photosensitive metallorganic precursor. The precursor films were spin coated onto 100 mm single-side polished silicon wafers using a Cee® Model 100 CB Spin Coater and Bake Unit

Publication Year: 2004

Process Overview

This paper presents a process for depositing and patterning mixed-metal oxide thin films using photosensitive metallorganic precursors for microelectronic applications such as dielectric layers and integrated capacitors. The precursor solution was prepared from Ba(2-ethylhexanoate), Sr(2-ethylhexanoate), and Ti(diisopropoxide) bis(acetylacetonate) in methyl isobutyl ketone, and films were prepared on single-side polished, 100 mm ⟨100⟩ n-type silicon wafers. The paper explicitly states that these films were coated by spin casting using a Cee® Model 100 CB Spin Coater and Bake Unit. It also notes that dielectric test structures were prepared by spin casting the BST precursor solution onto aluminum-coated wafers to produce films approximately 800 nm thick.

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