Optical Sensors for High Sensitivity Motion Detection

Spin Coater
Sensor
Materials: Photoresist

Nanyang Technological University, School of Mechanical and Aerospace Engineering; PhD thesis by Teo Jian Tong Adrian

Cee® 200X (Legacy)

Wafer Size: 150mm

Substrate Type: Si, SOI

This thesis presents fabrication of an optical MOEMS seismic sensor using double-sided DRIE on an SOI wafer. The process explicitly uses AZ 9260 positive photoresist on a CEE Spin Coater, along with HMDS priming and hot plate bake steps, tying Cee® coating equipment directly to university device fabrication.

Publication Year: 2016

Process Overview

This thesis focuses on fabrication of a seismic optical MOEMS device using a silicon-on-insulator (SOI) wafer as the primary substrate platform. In the lithography flow, HMDS is used as the adhesion promoter before coating AZ 9260 positive photoresist onto the silicon wafer surface. The thesis explicitly states that standard process parameters for the CEE Spin Coater were used, with the coated resist thickness targeted at 5.5–5.8 µm for the device layer using Standard Program 5, and 9.5–10.7 µm for the handle layer using Standard Program 2.

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