This article focuses on temporary wafer bonding materials designed for backside semiconductor processing in wafer-level packaging and 3-D IC fabrication. The study evaluates three polar thermoplastic bonding materials, labeled Material A, B, and C, along with mechanical and laser release approaches on 8-inch blank silicon wafers using either silicon or glass carrier wafers, depending on the debond method.
For the mechanical release process, the paper explicitly states that bonded wafer pairs were mechanically debonded using a Cee® Apogee® Mechanical Debonder. The study reports successful debonding after wafer thinning and downstream processing, showing that the temporary bonding stack remained compatible with mechanical release while preserving the thinned device wafer. This makes the paper a strong reference for Cee® Apogee® equipment in advanced temporary wafer bonding and debonding workflows.