Paper / report

Developing Planarization Technique for SiNx

The study reports HSQ coating for silicon nitride planarization at Stanford.

How Cee® equipment is used

The Stanford project report identifies an Apogee® spin coater for HSQ application during development of a silicon-nitride planarization method. The report does not specify a coater size.

Equipment reported
Apogee spin coater
Source type
Research project report
Publication year
Not recorded
Materials
HSQ
Substrate
Not reported
Source
Stanford Nano Shared Facilities

Process context

The process details describe the cited work. Reported recipes and results depend on the authors’ materials, substrates, and equipment configuration. Materials recorded for this reference include HSQ.

Source and equipment evidence

Stanford Nano Shared Facilities. Developing Planarization Technique for SiNx.

Open original source ↗

Application summary prepared by Cee. The original source remains the authority for its methods and findings.

SEMICON EUROPA · 10–13 NOVEMBER

Bring your process questions.

Meet Jacob, CEE’s Global Sales Director, in Munich with our partner SiSTEM Technology.

Stand C1353 · Messe München
Spin coating, bake and chill, temporary bonding and debonding.

Book a stand meeting →

Mention Jacob from CEE in SiSTEM’s booking form.