Optimization of 0.3 µm Photolithography Process Steps on Polysilicon

How Cee® equipment is used

The method identifies a Cee® 200X for automated photoresist dispense and manually dispensed bottom antireflective coating. A Cee® 200XD performs development. The work optimizes the lithography sequence for 0.3 µm patterning with 365 nm exposure.

Equipment reported

Cee® 200X and Cee® 200XD

Source type

Thesis

Publication year

2014

Materials

Antireflective Coating, Photoresist

Substrate

Not reported

Source

Istanbul Technical University Thesis

Process context

The process details describe the cited work. Reported recipes and results depend on the authors’ materials, substrates, and equipment configuration. Materials recorded for this reference include Antireflective Coating, Photoresist.