Thesis

Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers

This thesis describes bilayer-resist lift-off for back-gated semiconductor Schottky contacts. The workflow uses Cee® 100CB.

How Cee® equipment is used

Fabrication methods identify Cost Effective Equipment100CB for photoresist coating and bake. Cover/metadata verify Yulu Che,Ohio State,2010.

Equipment reported
Cee® 100CB
Source type
Doctoral dissertation
Publication year
2010
Materials
Photoresist
Substrate
Not reported
Source
OhioLINK Theses

Process context

The process details describe the cited work. Reported recipes and results depend on the authors’ materials, substrates, and equipment configuration. Materials recorded for this reference include Photoresist.

Source and equipment evidence

OhioLINK Theses. 2010. Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers.

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Application summary prepared by Cee. The original source remains the authority for its methods and findings.

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