Paper / report

Pyrene-based resist coating for electron-beam lithography

Pyrene-derived molecular-glass formulations were evaluated as electron-beam resists. A Cee® 200X deposited the resist films on primed silicon before bake, exposure, and development.

How Cee® equipment is used

The source names a CEE200X coating machine for spin coating. The associated bake steps are described separately; the paper does not identify their hotplate manufacturer.

Equipment reported
Cee® 200X
Source type
Research paper
Publication year
2024
Materials
Photoresist
Substrate
Si
Source
PubMed Central

Process context

The filtered resist solution was spin coated on primed silicon. The reported prebake was 80 °C for 180 seconds, followed by electron-beam exposure and a post-exposure bake. These are study conditions, rather than general equipment settings.

Source and equipment evidence

Cong X, Zhang S, Gao J, Cui X, Wu Y, Guo X, Hu R, Wang S, Chen J, Li Y, Yang G. 2024. Novel Etch-Resistant Molecular Glass Photoresist Based on Pyrene Derivatives for Electron Beam Lithography. ACS omega. 9(36):37585-37595. DOI: 10.1021/acsomega.4c01044.

Equipment reference: Experimental Section, photoresist film preparation.

Open original source ↗

Application summary prepared by Cee. The original source remains the authority for its methods and findings.

SEMICON EUROPA · 10–13 NOVEMBER

Bring your process questions.

Meet Jacob, CEE’s Global Sales Director, in Munich with our partner SiSTEM Technology.

Stand C1353 · Messe München
Spin coating, bake and chill, temporary bonding and debonding.

Book a stand meeting →

Mention Jacob from CEE in SiSTEM’s booking form.